METHOD OF MANUFACTURING EPITAXIAL SILICON CARBIDE WAFER, AND HOLDE FOR SILICON CARBIDE SINGLE CRISTAL SUBSTRATE USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial SiC wafer, which epitaxially grows a Sic single crystal thin film while keeping excellent productivity and suppressing variation of doping density by using an epitaxial growth device having a vertical array structure, and a holder for the SiC single crystal substrate.SOLUTION: When epitaxially growing a SiC single crystal thin film by vertically parallel-arranging a plurality of holders for holding the SiC single crystal substrates with gaps kept mutually between them, the SiC single crystal thin film is epitaxially grown on the upper surface side and the lower surface side at the same time by using the holders capable of holding the SiC single crystal substrates on the upper surface side and the lower surface side at least one for each side. The holder has an upper surface side holding member for holding the silicon carbide single crystal substrate on the upper surface side and a lower surface holding member which is integrally fixed to the upper side holding member to hold the silicon carbide crystal substrate on the lower surface side and in which an opening region for growing the silicon carbide crystal thin film on the silicon carbide crystal substrate.