发明名称 CRYSTALLINE LAMINATED STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a crystalline laminated structure capable of suppressing high resistance obtained in a heating step by an α-gallium oxide-based thin film having a corundum structure doped with impurities.SOLUTION: A crystalline laminated structure includes a ground substrate and an α-gallium oxide-based thin film having a corundum structure formed thereon directly or through another layer. In the α-gallium oxide-based thin film, the atomic ratio of gallium in metal elements in the α-gallium oxide-based thin film is 0.5 or higher, the film thickness is 1 μm or more, and at least a part is doped with impurities.
申请公布号 JP2015196603(A) 申请公布日期 2015.11.09
申请号 JP20140073646 申请日期 2014.03.31
申请人 FLOSFIA INC 发明人 ODA SHINYA;HITORA TOSHIMI
分类号 C30B29/16;C23C16/40;H01L21/365 主分类号 C30B29/16
代理机构 代理人
主权项
地址