SEMICONDUCTOR DEVICE HAVING A SELF-ALIGNED CONTACT PAD AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a semiconductor device and a manufacturing method thereof. Gate trenches, which extend in a first direction, can be formed inside a substrate having a field region for defining active regions. Buried gates can be formed in each of the gate trenches. Gate capping fences can be formed to fill the gate trenches above the buried gate, protrude upward from the upper surfaces of the active regions, and extend in a first direction. Bit line trenches can be formed in the gate capping fences to extend in a second direction perpendicular to the first direction, while traversing the gate capping fences. Structures of insulators can be formed on the inner wall of each of the bit line trenches. Bit lines and bit line capping patterns can be stacked on top of the structures of insulators to fill each of the bit line trenches. Contact pads can be formed on top of the substrate between the adjacent bit lines self-aligned on the gate capping fences.