发明名称 |
MANUFACTURING METHOD OF SINTERED REACTION BONDED SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY |
摘要 |
Provided is a method for producing reaction sintered silicon nitride having high thermal conductivity and suitable to be used for a heat insulation structure such as an electric device or the like. The present invention provides a method for producing a reaction sintered silicon nitride sintered body, the method comprising the steps of: milling a raw ingredient powder including an Si powder into a size of 1 micron or less; mixing and molding the milled Si powder and a sintering preparation; nitriding the molded product at 1350-1450^oC to form reaction bonded silicon nitride in the molded body; and producing a reaction sintered silicon nitride sintered body by post-sintering the reaction bonded silicon nitride at a temperature of 1850^oC or more. According to the present invention, a reaction sintered silicon nitride sintered body having high thermal conductivity can be provided. |
申请公布号 |
KR20150124490(A) |
申请公布日期 |
2015.11.06 |
申请号 |
KR20140050614 |
申请日期 |
2014.04.28 |
申请人 |
KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
KIM, HAI DOO;PARK, YOUNG JO;KIM, JIN MYUNG;LEE, JAE WOOK;KO, JAE WOONG;KIM, HA NEUL |
分类号 |
C04B35/64;C04B35/14;C04B35/584 |
主分类号 |
C04B35/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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