发明名称 |
METHOD FOR FABRICATING A MAGNETORESISTIVE DEVICE |
摘要 |
Embodiments of the present invention provide a method for manufacturing a magnetoresistive device. The method comprises: releasing a multi-layer magnetoresistive structure for forming the magnetoresistive device from a first substrate; and relaxing an intrinsic stress inside the multi-layer magnetoresistive structure, so as to improve magnetic properties and magnetoresistive properties of the magnetoresistive device. The magnetic properties and/or the magnetoresistive properties nonrestrictively include coercivity, squareness or abruptness of switching, magnetoresistance (mr), and resistance of the magnetoresistive device. |
申请公布号 |
KR20150124929(A) |
申请公布日期 |
2015.11.06 |
申请号 |
KR20150060871 |
申请日期 |
2015.04.29 |
申请人 |
NATIONAL UNIVERSITY OF SINGAPORE;YONSEI UNIVERSITY |
发明人 |
LOONG LI MING;YANG, HYUN SOO;LEE, WON HO;AHN, JONG HYUN;BHATIA CHARANJIT SINGH |
分类号 |
H01L43/08;H01L43/02;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|