发明名称 METHOD FOR FABRICATING A MAGNETORESISTIVE DEVICE
摘要 Embodiments of the present invention provide a method for manufacturing a magnetoresistive device. The method comprises: releasing a multi-layer magnetoresistive structure for forming the magnetoresistive device from a first substrate; and relaxing an intrinsic stress inside the multi-layer magnetoresistive structure, so as to improve magnetic properties and magnetoresistive properties of the magnetoresistive device. The magnetic properties and/or the magnetoresistive properties nonrestrictively include coercivity, squareness or abruptness of switching, magnetoresistance (mr), and resistance of the magnetoresistive device.
申请公布号 KR20150124929(A) 申请公布日期 2015.11.06
申请号 KR20150060871 申请日期 2015.04.29
申请人 NATIONAL UNIVERSITY OF SINGAPORE;YONSEI UNIVERSITY 发明人 LOONG LI MING;YANG, HYUN SOO;LEE, WON HO;AHN, JONG HYUN;BHATIA CHARANJIT SINGH
分类号 H01L43/08;H01L43/02;H01L43/12 主分类号 H01L43/08
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