摘要 |
The present invention relates to an organic light emitting diode display device which can prevent kink phenomenon without increasing a size of an area of a thin film transistor and a method for manufacturing the same. The organic light emitting diode display device of the present invention comprises: a first thin film transistor connected with multiple gate lines and multiple data lines by being formed on a substrate; a second thin film transistor connected with the first thin film transistor; and an organic light emitting diode connected with the second thin film transistor. The first and the second thin film transistors include: a source electrode connected with a source region through a semiconductor layer, a gate insulating film, a gate electrode and a source contact hole including a channel region, the source region and the drain region, and a drain electrode which is connected with a drain region through a drain contact hole. Furthermore, the semiconductor layer of the second thin film transistor additionally includes a body region, wherein a first impurity is doped in the source region and the drain region, a second impurity which is different to the first impurity is doped in the body region. The body region and the source region shares the source contact hole, and the body region is connected with the source electrode. |