发明名称 Imprinted Memory
摘要 The present invention discloses an imprinted memory, more particularly a three-dimensional imprinted memory (3D-iP). Instead of photo-lithography, it uses imprint-lithography (also referred to as nano-imprint lithography, or NIL) to record data. For the sub-100 nm nodes, the data-template used by imprint-lithography is much less expensive than the data-mask used by photo-lithography.
申请公布号 US2015318475(A1) 申请公布日期 2015.11.05
申请号 US201514745377 申请日期 2015.06.20
申请人 ZHANG Guobiao 发明人 ZHANG Guobiao
分类号 H01L45/00;H01L27/24 主分类号 H01L45/00
代理机构 代理人
主权项 1. A method of manufacturing an imprinted memory, comprising the steps of: 1) forming a data-coding layer; 2) transferring a data-pattern from a data-template to said data-coding layer using imprint-lithography; 3) forming a plurality of address lines coupled to said data-pattern; wherein said data-pattern represents data stored in said imprinted memory; the dimensional of said data-pattern is less than 100 nm; and, said data-template comprises nanometer-scale non-periodic pattern.
地址 Corvallis OR US