Magnetoresistive Structure having Two Dielectric Layers, and Method of Manufacturing Same

摘要

A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least an encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.

主权项

1. A method of manufacturing a magnetoresistive device from: (i) a first electrode, (ii) a first dielectric layer disposed over the first electrode, (iii) a free layer disposed over the first tunnel barrier, (iv) a second tunnel barrier layer disposed over the free layer, (v) a second electrode disposed over the second dielectric layer, method of manufacturing comprising:
etching through the second electrode and the second dielectric layer to provide a sidewall of (i) the second electrode and (ii) the second dielectric layer; forming an encapsulation material on the sidewall of the second electrode and the second dielectric layer; and after forming the encapsulation material on the sidewall of the second electrode and the second dielectric layer, etching through the surface of the free magnetic layer and at least a portion of the first dielectric layer.