| 发明名称 |
STRUCTURES, DEVICES AND METHODS FOR MEMORY DEVICES |
| 摘要 |
Structures, devices and methods are provided for fabricating memory devices. A structure includes: a first conductive line disposed in a first conductive layer; a first landing pad disposed in the first conductive layer and associated with a second conductive line disposed in a second conductive layer; and a second landing pad disposed in the first conductive layer and associated with a third conductive line disposed in a third conductive layer. The second conductive layer and the third conductive layer are different from the first conductive layer. |
| 申请公布号 |
US2015318241(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201414334753 |
申请日期 |
2014.07.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
CHANG FENG-MING;HUNG LIEN-JUNG;HUANG HUAI-YING;WANG PING-WEI |
| 分类号 |
H01L23/528;H01L21/768;H01L27/11 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure for fabricating a memory device, the structure comprising:
a first conductive line disposed in a first conductive layer; a first landing pad disposed in the first conductive layer and associated with a second conductive line disposed in a second conductive layer; and a second landing pad disposed in the first conductive layer and associated with a third conductive line disposed in a third conductive layer; wherein the second conductive layer and the third conductive layer are different from the first conductive layer. |
| 地址 |
Hsinchu TW |
