发明名称 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP
摘要 A resist underlayer film forming composition for lithography for a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, including: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole,;R1aR2bSi(R3)4−(a+b)  Formula (1);R4a1R5b1Si(R6)4−(a1+b1)  Formula (2)
申请公布号 US2015316849(A1) 申请公布日期 2015.11.05
申请号 US201314439791 申请日期 2013.10.24
申请人 NISSAN CHEMICAL INDUSTRIES, LTD. 发明人 KANNO Yuta;NAKAJIMA Makoto;TAKEDA Satoshi;WAKAYAMA Hiroyuki
分类号 G03F7/075;H01L21/308;H01L21/311 主分类号 G03F7/075
代理机构 代理人
主权项 1. A resist underlayer film forming composition for lithography, comprising: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole, R1aR2bSi(R3)4−(a+b)  Formula (1)[in Formula (1), R1 is a monovalent organic group containing a group of Formula (1-1), Formula (1-2), Formula (1-3), Formula (1-4), or Formula (1-5):(in Formula (1-1), Formula (1-2), Formula (1-3), Formula (1-4), and Formula (1-5), each of T1, T4, and T7 is an alkylene group, a cyclic alkylene group, an alkenylene group, an arylene group, a sulfur atom, an oxygen atom, an oxycarbonyl group, an amido group, a secondary amino group, or a combination of these groups and atoms; T2 is an alkyl group; each of T3 and T5 is an aliphatic ring or an aromatic ring; each of T6 and T8 is a lactone ring; and n is an integer of 1 or 2) and is bonded to a silicon atom through a Si—C bond; R2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; and a is an integer of 1, b is an integer of 0 or 1, and a+b is an integer of 1 or 2], R4a1R5b1Si(R6)4−(a1+b1)  Formula (2)[in Formula (2), R4 is a monovalent organic group containing a group of Formula (2-1), Formula (2-2), or Formula (2-3):and is bonded to a silicon atom through a Si—C bond; R5 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to a silicon atom through a Si—C bond; R6 is an alkoxy group, an acyloxy group, or a halogen group; and a1 is an integer of 1, b1 is an integer of 0 or 1, and a1+b1 is an integer of 1 or 2].
地址 Tokyo JP