| 发明名称 |
FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME |
| 摘要 |
Ferroelectric memory and methods of forming the same are provided. An example memory cell can include a buried recessed access device (BRAD) formed in a substrate and a ferroelectric capacitor formed on the BRAD. |
| 申请公布号 |
WO2015167887(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
WO2015US26994 |
申请日期 |
2015.04.22 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CHAVAN, ASHONITA A.;CALDERONI, ALESSANDRO;RAMASWAMY, D.V. NIRMAL |
| 分类号 |
H01L27/115;H01L27/108 |
主分类号 |
H01L27/115 |
| 代理机构 |
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代理人 |
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