PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS

摘要

Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

主权项

1. A method for fabricating a memory stack, the method comprising:
forming the memory stack out of a plurality of elements; forming an adhesion species on at least one sidewall of the memory stack, the adhesion species having a gradient structure that results in the adhesion species intermixing with an element of the memory stack, the gradient structure comprising a film of the adhesion species on an outer surface of the at least one sidewall; and implanting a dielectric material into the film.