SYSTEM AND METHOD FOR OPTIMIZATION OF AN IMAGED PATTERN OF A SEMICONDUCTOR DEVICE

摘要

In a method, a layout of a device having a pattern of features is provided. The method continues to include identifying a first portion of at least one feature of the plurality of features. An image criteria for the first portion may be assigned. A lithography optimization parameter is determined based on the assigned image criteria for the first portion. Finally, the first portion of the at least one feature is imaged onto a semiconductor substrate using the determined lithography optimization parameter.

主权项

1. A method, comprising:
receiving a layout of a device having a first feature and a second feature on a first layer of the layout, wherein the first feature and the second feature are each symmetrical; determining a first criticality of an edge of the first feature, wherein the criticality is determined based on a third feature defined by a second layer of the layout; determining a first optimized lithography parameter associated with the edge of the first feature based on the determined first criticality; and using a photomask having the first feature and the second feature defined to image the first and second features onto a semiconductor substrate, wherein the using the photomask to image includes using the determined first optimized lithography parameter, and wherein the imaged first and second features are each asymmetrical.