| 发明名称 |
DEVICE FOR GENERATING A MODULATION OF AN OPTICAL SIGNAL COMPRISING ELECTRO-ABSORPTION MODULATORS |
| 摘要 |
The invention relates to a device for generating a modulation (10) of an optical signal comprising:
a first electro-absorption modulator (36) comprising:
a first P-doped semi-conductor area (38),a first N-doped semi-conductor area (40), anda first active portion (42),a second electro-absorption modulator (50) comprising:
a second P-doped semi-conductor area (52) in electric contact with the first N-doped semi-conductor area (40),a second N-doped semi-conductor area (54), anda second active portion (56), anda connector for introducing electric modulation (46),
characterized in that the connector for introducing electric modulation (46) is in contact with the first N-doped semi-conductor area (40) and the second P-doped semi-conductor area (52). |
| 申请公布号 |
US2015316829(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201214439375 |
申请日期 |
2012.10.31 |
| 申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES |
发明人 |
KAZMIERSKI Christophe;CARRARA David |
| 分类号 |
G02F1/225;G02F1/17 |
主分类号 |
G02F1/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device for generating a modulation of an optical signal comprising:
a first electro-absorption modulator comprising:
a first P-doped semi-conductor area,a first N-doped semi-conductor area, anda first active portion connecting both first semi-conductor areas, a second electro-absorption modulator comprising:
a second P-doped semi-conductor area in electric contact with the first N-doped semi-conductor area,a second N-doped semi-conductor area, anda second active portion connecting both second semi-conductor areas, and a connector for introducing electric modulation,
wherein the connector for introducing electric modulation is in contact with the first N-doped semi-conductor area and the second P-doped semi-conductor area. |
| 地址 |
PARIS FR |
