发明名称 |
Low-Temperature Fabrication of Transparent Conductive Contacts for p-GaN and n-GaN |
摘要 |
A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In2O3 showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C. |
申请公布号 |
US2015318446(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201414265763 |
申请日期 |
2014.04.30 |
申请人 |
Intermolecular, Inc. |
发明人 |
Hu Jianhua;Hsu Heng Kai;Le Minh Huu;Nijhawan Sandeep;Sapirman Teresa B. |
分类号 |
H01L33/42;H01L33/46;H01L33/00;H01L33/32 |
主分类号 |
H01L33/42 |
代理机构 |
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代理人 |
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主权项 |
1. An optoelectronic device, comprising:
a substrate; a gallium nitride (GaN) layer formed over or in the substrate; and a transparent conductive layer formed over the GaN layer; wherein the transparent conductive layer comprises indium zinc oxide; wherein the indium zinc oxide comprises indium oxide; and wherein a weight percentage of the indium oxide in the indium zinc oxide is between about 60% and about 92%. |
地址 |
San Jose CA US |