发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3. |
申请公布号 |
US2015318435(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514798044 |
申请日期 |
2015.07.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGO Hajime;HARADA Yoshiyuki;KIMURA Shigeya;YOSHIDA Hisashi;NUNOUE Shinya |
分类号 |
H01L33/00;H01L33/06;H01S5/343;H01L33/32;H01S5/30 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor light emitting device, comprising:
forming a light emitting layer including a nitride semiconductor on an n-type semiconductor layer including a nitride semiconductor; forming a first film of AlxGa1-xN (0.05≦x≦0.2) on the light emitting layer, the first film including Mg; forming a second film including a nitride semiconductor including Mg on the first film; and forming a third film including a nitride semiconductor including Mg on the second film, the forming of the first film including alternately and multiply repeating:
a first process of supplying a group V source-material gas, a gas including Ga, a gas including Al, and a gas including Mg; anda second process of supplying the group V source-material gas without supplying the gas including Ga, the gas including Al, and the gas including Mg, a maximum value of a concentration of Mg in a p-side region including the light emitting layer, the first film, and the second film being not less than 1×1020 cm−3 and not more than 3×1020 cm−3, an Al concentration in the p-side region having a maximum value at a first position, the Al concentration being 1/100 of the maximum value at a second position arranged with the first position along a first direction from the light emitting layer toward the first film in a region between the first position and a position corresponding to the light emitting layer, a Mg concentration at the second position being not less than 2×1018 cm −3 . |
地址 |
Minato-ku JP |