SEMICONDUCTOR DEVICE, MULTILAYER SEMICONDUCTOR DEVICE, POST-PACKAGE MULTILAYER SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which placement on a wiring and lamination of a semiconductor device are easy and which inhibits warpage of a semiconductor device even when a density of metal wiring is high.SOLUTION: A semiconductor device which has a semiconductor element, and metal pads on the semiconductor element and metal wiring which are electrically connected to the semiconductor element, in which the metal wiring is electrically connected to through electrodes and solder bumps, and comprises: a first insulation layer on which the semiconductor element is placed; a second insulation layer formed on the semiconductor element; and a third insulation layer formed on the second insulation layer. The metal wiring is electrically connected to the semiconductor element via the metal pads on the semiconductor element at a top face of the second insulation layer, and pierces the second insulation layer from a top face of the second insulation layer to be electrically connected to the through electrodes on an undersurface of the second insulation layer. The semiconductor device has metal wiring under the semiconductor element, which is arranged between the first insulation layer and the semiconductor element, and electrically connected with the metal wiring at the undersurface of the second insulation layer.