| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist lower layer film forming composition for lithography capable of forming a resist lower layer film having an excellent dry etching rate without generating intermixing with a resist film.SOLUTION: There is provided a resist lower layer film forming composition for lithography containing a glycoluril compound represented by the formula (I) or a reaction product of the glycoluril compound represented by the formula (I) and acid anhydride, and a crosslinking agent and a solvent. In the formula (I), Rand Rare same or different and represent a hydrogen atom, a lower alkyl group or a phenyl group, R, Rand Rare same or different and represent a hydrogen atom or a glycidyl group. |
