| 摘要 |
PROBLEM TO BE SOLVED: To provide an art to simultaneously achieve reduction of field concentration and a decrease in hole current.SOLUTION: A semiconductor device 10 includes a semiconductor substrate 11, a trench insulated gate 27 and an emitter trench 57. The semiconductor substrate 11 has an n-type emitter region 40, a p-type body region 36, an n-type drift region 32 and a p-type first floating region 34. At least a part of a bottom face of the trench insulated gate 27 contacts the first floating region 34. A lateral face of the trench insulated gate 27 and a lateral face of the emitter trench 57 are opposed to each other across the body region 36. |
