发明名称 |
3D STACKED-CHIP PACKAGE |
摘要 |
Disclosed herein is a package comprising a first die, a second die, and an insulating film extending along sidewalls of the first die or the second die. The first die includes a first redistribution layer (RDL) disposed on a first semiconductor substrate and a conductive element in the first RDL. The second die includes a second RDL disposed on a second semiconductor substrate, wherein the first RDL is bonded to the second RDL. The package further includes a via extending from the conductive elements through the first semiconductor substrate and a spacer interposed between the first semiconductor substrate and the via. The first spacer extends from the conductive element through the first semiconductor substrate. |
申请公布号 |
US2015318267(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514685389 |
申请日期 |
2015.04.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Yu Chen-Hua;Tsai Wen-Ching;Chen Ming-Fa |
分类号 |
H01L25/065;H01L23/00;H01L21/02;H01L25/00 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
1. A package comprising:
a first die comprising:
a first redistribution layer (RDL) disposed on a first semiconductor substrate; anda first conductive element in the first RDL; a second die comprising a second RDL disposed on a second semiconductor substrate, wherein the first RDL is bonded to the second RDL; an insulating film extending along sidewalls of the first die or the second die; a first via extending from the first conductive elements through the first semiconductor substrate; and a first spacer interposed between the first semiconductor substrate and the first via, wherein the first spacer extends from the first conductive element through the first semiconductor substrate. |
地址 |
Hsin-Chu TW |