BACK-END-OF-LINE (BEOL) INTERCONNECT STRUCTURE

摘要

A method of fabricating an interconnect structure on a wafer and an interconnect structure are provided. A dielectric layer is provided on the wafer, with the dielectric layer having a recess therein. A silicon (Si) layer is deposited in the recess. An interconnect is formed by providing a barrier layer and a conductive layer in the recess over the Si layer. The Si layer has a density that prevents or substantially prevents the barrier layer from moving away from the conductive layer and towards the dielectric layer during subsequent processing of the interconnect structure.

主权项

1. A method of fabricating an interconnect structure on a wafer, the method comprising:
providing a dielectric layer on the wafer, the dielectric layer having a recess therein; depositing a silicon (Si) layer in the recess; forming an interconnect by providing a barrier layer and a conductive layer in the recess over the Si layer; forming a nitride layer in a first portion of the Si layer that is adjacent to a top surface of the dielectric layer; and forming an oxide layer in a second portion of the Si layer that is adjacent to the first portion.