| 摘要 |
Provided are a method for forming a photoresist pattern and a method for manufacturing an integrated circuit device, wherein the method for forming a photoresist pattern includes a process of cooling the photoresist film at room temperature before exposing the photoresist film after a first heat treatment of a photoresist film. The method for forming the photoresist pattern comprises: a step of cooling the photoresist film at room temperature after a first heat treatment of a photoresist film; a step of exposing a part of the cooled photoresist film; and a step of forming a photoresist pattern by developing the heated photoresist film after a second heat treatment of the exposed photoresist film. |
