| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor array which is insulated from the influence of external light.SOLUTION: A thin film transistor array includes an insulating substrate, a gate electrode, gate wiring, a gate insulation film, a source electrode, source wiring, a drain electrode, a pixel electrode, a semiconductor pattern, an interlayer insulation film and an upper pixel electrode. The upper pixel electrode is connected to the pixel electrode via an opening formed in the interlayer insulation film. When viewed from above the insulating substrate, the opening of the interlayer insulation film is formed so as to surround at least a part of a channel part which is a region of the semiconductor pattern between the source electrode and the drain electrode, and the upper pixel electrode fills the opening of the interlayer insulation film. |
