发明名称 TRANSPARENT ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
摘要 A highly transparent organic thin-film transistor that has superior transistor performance and can be applied to flexible devices includes: a transparent support substrate; a first gate electrode formed on the transparent support substrate; a second gate electrode formed on the first gate electrode; a polymeric gate-insulating layer formed on the second gate electrode; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode.
申请公布号 US2015318502(A1) 申请公布日期 2015.11.05
申请号 US201314651003 申请日期 2013.12.25
申请人 FUJI ELECTRIC CO., LTD. 发明人 KANAI Naoyuki
分类号 H01L51/05 主分类号 H01L51/05
代理机构 代理人
主权项 1. A transparent organic thin-film transistor comprising: a first gate electrode formed on a transparent support substrate, an inert metal being used in the first gate electrode; a second gate electrode formed on the first gate electrode, an active metal being used in the second gate electrode; a polymeric gate-insulating layer formed on the second gate electrode, a fluoropolymer being used in the polymeric gate-insulating layer; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode.
地址 Kawasaki-shi, Kanagawa JP