发明名称 |
TRANSPARENT ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME |
摘要 |
A highly transparent organic thin-film transistor that has superior transistor performance and can be applied to flexible devices includes: a transparent support substrate; a first gate electrode formed on the transparent support substrate; a second gate electrode formed on the first gate electrode; a polymeric gate-insulating layer formed on the second gate electrode; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode. |
申请公布号 |
US2015318502(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201314651003 |
申请日期 |
2013.12.25 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
KANAI Naoyuki |
分类号 |
H01L51/05 |
主分类号 |
H01L51/05 |
代理机构 |
|
代理人 |
|
主权项 |
1. A transparent organic thin-film transistor comprising:
a first gate electrode formed on a transparent support substrate, an inert metal being used in the first gate electrode; a second gate electrode formed on the first gate electrode, an active metal being used in the second gate electrode; a polymeric gate-insulating layer formed on the second gate electrode, a fluoropolymer being used in the polymeric gate-insulating layer; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode. |
地址 |
Kawasaki-shi, Kanagawa JP |