| 发明名称 |
ALUMINUM SUBSTRATE FOR A THIN FILM TRANSISTOR |
| 摘要 |
A substrate comprises of a recrystallized aluminum alloy. An organic polymer layer coats the top surface of the aluminum substrate. A layer of one of: SiO2, SiN and Al2O3 is on the organic polymer and at least one electrode is adhered to the layer of one of: SiO2, SiN and Al2O3. A method comprises depositing an organic polymer on an aluminum substrate, annealing the aluminum substrate; depositing a layer of one of SiO2, SiN and Al2O3 on the organic polymer; and adhering an electrode to the layer of one of: SiO2, SiN and Al2O3. |
| 申请公布号 |
US2015318403(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514700991 |
申请日期 |
2015.04.30 |
| 申请人 |
ALCOA INC. |
发明人 |
Levendusky Thomas L.;Shah Kirit;Gregory Marcia;VanBrookhoven Jeff S.;Hatalis Miltiadis K. |
| 分类号 |
H01L29/786;H01L29/51;H01L21/477;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a. a substrate comprised of a recrystallized aluminum alloy; b. an organic polymer on top surface of the aluminum substrate; C. a layer of one of: SiO2, SIN and Al2O3 on the organic polymer; and d. at least one electrode adhered to the layer of one of SiO2, SiN and Al2O3. |
| 地址 |
Pittsburgh PA US |
