发明名称 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor and manufacturing method thereof, an array substrate (1) comprising the thin film transistor and manufacturing method thereof. The method of manufacturing the thin film transistor comprises forming an active layer (4) and a source-drain electrode layer (5), forming a photoresist layer (6) on the source-drain electrode layer (5) and forming a pattern of the photoresist layer by a pattern process; etching the source-drain electrode layer (5) by using the pattern of the photoresist layer as a mask to form a pattern of the source-drain electrode layer including a source electrode and a drain electrode; and removing the photoresist, then etching the active layer (4) by using the pattern of the source-drain electrode layer as a mask to form a pattern of the active layer. The method of manufacturing the thin film transistor and the array substrate can prevent or decrease the possibility of the region of the active layer between the source electrode and the drain electrode in the thin film transistor being polluted by organics, thereby improve the electrical performance of the thin film transistor.
申请公布号 US2015318362(A1) 申请公布日期 2015.11.05
申请号 US201414406892 申请日期 2014.06.18
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. 发明人 WANG Shoukun;GUO Huibin;FENG Yuchun;LIU Xiaowei;GUO Zongjie
分类号 H01L29/417;H01L27/12;H01L29/66;H01L29/786;H01L21/283;H01L21/027 主分类号 H01L29/417
代理机构 代理人
主权项 1. A method of manufacturing a thin film transistor, comprising: forming an active layer and a source-drain electrode layer, forming a photoresist layer on the source-drain electrode layer, and forming a pattern of the photoresist layer by a pattern process; etching the source-drain electrode layer by using the pattern of the photoresist layer as a mask to form a pattern of the source-drain electrode layer including a source electrode and a drain electrode; and removing the photoresist, then etching the active layer by using the pattern of the source-drain electrode layer as a mask to form a pattern of the active layer.
地址 Beijing CN