| 发明名称 |
TUNNEL FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region. |
| 申请公布号 |
US2015318213(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201414455598 |
申请日期 |
2014.08.08 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI Teng-Chun;WANG Li-Ting;LIN Cheng-Tung;CHEN De-Fang;PENG Chih-Tang;WANG Chien-Hsun;LIN Hung-Ta |
| 分类号 |
H01L21/8234;H01L29/08;H01L21/265;H01L29/06;H01L29/66;H01L29/10;H01L29/78;H01L27/088 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A tunnel field-effect transistor comprising:
a drain region; a source region, wherein the drain and source regions are of opposite conductive types; a channel region disposed between the drain region and the source region; a metal gate layer disposed around the channel region; and a high-k dielectric layer disposed between the metal gate layer and the channel region. |
| 地址 |
Hsinchu TW |
