| 摘要 |
Provided is a method to manufacture a light emitting diode by using a silicon (Si) substrate and, more specifically, to a method, including a step of forming an AIN buffer layer on a silicon (Si) substrate; and a step of forming a nitride-based light emitting structure in which an n type nitride layer, an active layer, and a p type nitride layer are sequentially laminated on the AIN buffer layer. The AIN buffer layer is formed by using ammonia (NH_3) gas and tri-metal aluminum (TMAI) gas, and the ammonia (NH3) gas is supplied in pulse and consecutive modes. According to the present invention, since the AIN buffer layer is formed by supplying the ammonia gas to the silicon substrate in the pulse and consecutive modes, the mobility of an (AI) aluminium atom is increased. Moreover, since an AIN crystalline germ group is formed and increased to form an AIN crystalline germ group layer, penetration potential density is reduced. Moreover, since a high quality AIN buffer layer is formed on the silicon substrate, a high quality nitride-based light emitting structure is formed on the AIN buffer layer in order to improve the efficiency of a light emitting diode. |
