SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device is disclosed. The semiconductor device includes a semiconductor pattern which is provided on a buffer layer including silicon germanium on a substrate, and has a source region, a drain region, and a channel region connecting the source region and the drain region. A gate electrode surrounds the channel region, and is extended between the substrate and the channel region. The source and drain regions contain germanium of 30 atm% or more.