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发明名称
Operation method of semiconductor device
摘要
<p>본 발명의 실시예에 따른 반도체 소자의 동작 방법은, 게이트 전압 레벨 또는 드레인 전압 레벨을 조절함으로써, 바디 영역에 캐리어를 추가하거나 또는 바디 영역으로부터 캐리어를 제거할 수 있다. 그에 따라, 복수개의 데이터 상태를 구현할 수 있다.</p>
申请公布号
KR101566404(B1)
申请公布日期
2015.11.05
申请号
KR20080117475
申请日期
2008.11.25
申请人
发明人
分类号
H01L21/8242;H01L27/108
主分类号
H01L21/8242
代理机构
代理人
主权项
地址
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