发明名称 LaNiO3 THIN FILM FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a LaNiOthin film having even film thickness in which there is no pinhole on a coating film, and there is no void caused by the pinhole after firing of the coating film.SOLUTION: While an Hamount, HO amount, and CO amount to be adsorbed to a substrate surface for 1 cm, on the substrate which is coated with a Pt electrode, are set to 1.0×10g or less, 2.7×10g or less, and 4.2×10g or less, a LaNiOthin film formation liquid composition is coated to the substrate surface and dried for forming a coating film, and after calcinating the coating film, the coating film is fired for forming a LaNiOthin film.
申请公布号 JP2015193523(A) 申请公布日期 2015.11.05
申请号 JP20140260010 申请日期 2014.12.24
申请人 MITSUBISHI MATERIALS CORP 发明人 FUJII JUN;SAKURAI HIDEAKI;SOYAMA NOBUYUKI
分类号 C01G53/00;B05D3/02;B05D7/24;C09D1/00;H01G4/12;H01G4/33 主分类号 C01G53/00
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