发明名称 |
GATE CONTROL CIRCUIT |
摘要 |
An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor. |
申请公布号 |
US2015318843(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514709431 |
申请日期 |
2015.05.11 |
申请人 |
Silego Technology, Inc. |
发明人 |
Brumett, JR. Thomas D.;Martinez Marcelo;McDonald John Othniel |
分类号 |
H03K3/012;H03K17/687 |
主分类号 |
H03K3/012 |
代理机构 |
|
代理人 |
|
主权项 |
1. An integrated circuit for switching a transistor, comprising:
an operational amplifier configured to drive the transistor; slew rate control circuitry configured to control slew rate of the transistor source voltage during turn on; and delay control circuitry configured to set a delay period, wherein the operational amplifier is configured to not begin driving the transistor until after expiration of the delay period. |
地址 |
Santa Clara CA US |