| 发明名称 |
VERTICAL FLOATING GATE NAND WITH OFFSET DUAL CONTROL GATES |
| 摘要 |
A method of making a monolithic three dimensional NAND string includes providing a stack of alternating insulating layers and control gate films over a major surface of a substrate. Each of the control gate films includes a middle layer located between a first control gate layer and a second control gate layer, the middle layer being a different material from the first and second control gate layers and from the insulating layers. The method also includes forming a front side opening in the stack, and forming a blocking dielectric, at least one charge storage region, a tunnel dielectric and a semiconductor channel in the front side opening in the stack. |
| 申请公布号 |
US2015318295(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201414265733 |
申请日期 |
2014.04.30 |
| 申请人 |
SanDisk Technologies, Inc. |
发明人 |
Kai James;Purayath Vinod;Lee Donovan;Matsudaira Akira |
| 分类号 |
H01L27/115;H01L21/285;H01L21/28;H01L21/02;H01L29/423;H01L29/788 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a monolithic three dimensional NAND string, comprising:
providing a stack of alternating insulating layers and control gate films over a major surface of a substrate, each of the control gate films comprising: a middle layer located between a first control gate layer and a second control gate layer, the middle layer comprising a different material from the first and second control gate layers and from the insulating layers; forming a front side opening in the stack; and forming a blocking dielectric, at least one charge storage region, a tunnel dielectric and a semiconductor channel in the front side opening in the stack. |
| 地址 |
Plano TX US |
