SEMICONDUCTOR DEVICE

摘要

The present invention is provided with: a semiconductor element (5), which has a semiconductor substrate (1), an insulating film (2) that is formed on a surface (1A) of the semiconductor substrate (1) and that has an opening, and an electrode (3) that is formed within the opening on the surface (1A) of the semiconductor substrate (1); and a first protective film (9) that is provided so as to cover the semiconductor element (5). The film thickness (W1) of the insulating film (2) is 1/500-4 μm of the semiconductor substrate thickness (W2), and the compressive stress of the insulating film per film thickness is 100 MPa/μm or greater.