| 摘要 |
The present invention provides a method for manufacturing a capacitor element having a good LC characteristic. This capacitor element manufacturing method for forming a semiconductor layer and a conductive layer in sequence on a dielectric layer after a chemical conversion step for forming the dielectric layer in a surface layer part of an anode body obtained by molding and sintering powder having tungsten as a main component is characterized by comprising, before forming the dielectric layer, an etching step for removing a natural oxide film formed on surface layer parts of the outer surface and the pore inner surface of the anode body such that the thickness thereof falls within the range of 0.5-5.0 nm, and performing the chemical conversion step at a temperature of -4 to 18°C for 7 to 110 minutes after a predetermined voltage is reached. |
