| 发明名称 |
Tunable Stressed Polycrystalline Silicon on Dielectrics in an Integrated Circuit |
| 摘要 |
A method of forming an integrated circuit device is disclosed. A polycrystalline silicon layer is formed in direct contact with a dielectric material so that the dielectric material induces a stress in the polycrystalline silicon layer as the polycrystalline silicon layer is formed. A MOS transistor that includes a gate comprising the polycrystalline silicon is then completed. |
| 申请公布号 |
US2015318394(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514798055 |
申请日期 |
2015.07.13 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Hierlemann Matthias;Sarma Chandrasekhar |
| 分类号 |
H01L29/78;H01L29/04;H01L29/16;H01L21/02;H01L29/51;H01L29/66;H01L21/285 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an integrated circuit device, the method comprising:
forming a dielectric material; forming a polycrystalline silicon layer in direct contact with the dielectric material so that the dielectric material induces a stress in the polycrystalline silicon layer as the polycrystalline silicon layer is formed; and completing formation of a MOS transistor that includes a gate comprising the polycrystalline silicon. |
| 地址 |
Neubiberg DE |
