| 发明名称 |
METHOD, SYSTEM AND DEVICE FOR RECESSED CONTACT IN MEMORY ARRAY |
| 摘要 |
Embodiments disclosed herein may relate to forming a contact region for an interconnect between a selector transistor and a word-line electrode in a memory device. |
| 申请公布号 |
US2015318331(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514799471 |
申请日期 |
2015.07.14 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Pellizzer Fabio;Rigano Antonino;Mariani Marcello;Benvenuti Augusto |
| 分类号 |
H01L27/24;H01L29/423;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming one or more recessed word-line contact regions in a first material of a phase change memory array, including performing a pitch multiplication operation. |
| 地址 |
Boise ID US |
