| 发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING FOR SAME |
| 摘要 |
A semiconductor device comprising: a semiconductor substrate; a first wiring having, in this order, on a first region of a semiconductor substrate, a second silicon film containing impurity, and a conductive film; and a second wiring having, in this order, on a second region of a semiconductor substrate, a first silicon film containing impurity, an etching stop film, a second silicon film containing impurity, and a conductive film. |
| 申请公布号 |
US2015318287(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201314651646 |
申请日期 |
2013.12.06 |
| 申请人 |
SUGINO Kenichi |
发明人 |
Sugino Kenichi |
| 分类号 |
H01L27/108;H01L23/532;H01L21/311;H01L23/528 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a first wiring having, in this order, on a first region of said semiconductor substrate, a second silicon film containing impurity, and a conductive film; and a second wiring having, in this order, on a second region of said semiconductor substrate, a first silicon film containing impurity, an etching stop film, a second silicon film containing impurity, and a conductive film. |
| 地址 |
US |
