发明名称 |
Self-Aligned Semiconductor Fabrication With Fosse Features |
摘要 |
The present disclosure describes methods for transferring a desired layout into a target layer on a semiconductor substrate. An embodiment of the methods includes forming a first desired layout feature as a first line over the target layer; forming a spacer around the first line; depositing a spacer-surrounding material layer; removing the spacer to form a fosse pattern trench surrounding the first line; and transferring the fosse pattern trench into the target layer to form a fosse feature trench in the target layer, wherein the fosse feature trench surrounds a first portion of the target layer that is underneath a protection layer. In some embodiments, the method further includes patterning a second desired layout feature of the desired layout into the target layer wherein the fosse feature trench and the protection layer serve to self-align the second desired layout feature with the first portion of the target layer. |
申请公布号 |
US2015318209(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201414266878 |
申请日期 |
2014.05.01 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Shih-Ming;Hsieh Ken-Hsien;Lai Chih-Ming;Shieh Ming-Feng;Liu Ru-Gun;Gau Tsai-Sheng |
分类号 |
H01L21/768;H01L21/3213;H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for transferring a desired layout into a target layer on a semiconductor substrate, the method comprising:
forming a first desired layout feature as a first line over the target layer; forming a spacer around the first line; depositing a spacer-surrounding material layer, the spacer-surrounding material layer surrounding the spacer; removing the spacer to form a fosse pattern trench surrounding the first line; and transferring the fosse pattern trench into the target layer to form a fosse feature trench in the target layer, wherein the fosse feature trench surrounds a first portion of the target layer that is underneath a protection layer. |
地址 |
Hsin-Chu TW |