| 发明名称 |
SEMICONDUCTOR DEVICE HAVING IMPROVED HEAT DISSIPATION |
| 摘要 |
A semiconductor device having improved heat dissipation is disclosed. The semiconductor device includes a semi-insulating substrate and epitaxial layers disposed on the semi-insulating substrate wherein the epitaxial layers include a plurality of heat conductive vias that are disposed through the epitaxial layers with the plurality of heat conductive vias being spaced along a plurality of finger axes that are aligned generally parallel across a surface of the epitaxial layers. The semiconductor device further includes an electrode having a plurality of electrically conductive fingers that are disposed along the plurality of finger axes such that the electrically conductive fingers are in contact with the first plurality of heat conductive vias. |
| 申请公布号 |
US2015318376(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514797573 |
申请日期 |
2015.07.13 |
| 申请人 |
RF Micro Devices, Inc. |
发明人 |
Ritenour Andrew P. |
| 分类号 |
H01L29/66;H01L23/367;H01L21/768;H01L21/02;H01L29/20;H01L21/283 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device having improved heat dissipation comprising:
providing a semi-insulating substrate; disposing epitaxial layers on the semi-insulating substrate; disposing a plurality of heat conductive vias through the epitaxial layers with the plurality of heat conductive vias being spaced along a plurality of finger axes that are aligned generally parallel across a surface of the epitaxial layers; and disposing an electrode with a plurality of electrically conductive fingers along the plurality of finger axes such that the plurality of electrically conductive fingers are in contact with the plurality of heat conductive vias. |
| 地址 |
Greensboro NC US |
