发明名称 |
SEMICONDUCTOR DEVICE INCLUDING GATE CHANNEL HAVING ADJUSTED THRESHOLD VOLTAGE |
摘要 |
A semiconductor device includes at least one first semiconductor fin formed on an nFET region of a semiconductor device and at least one second semiconductor fin formed on a pFET region. The at least one first semiconductor fin has an nFET channel region interposed between a pair of nFET source/drain regions. The at least one second semiconductor fin has a pFET channel region interposed between a pair of pFET source/drain regions. The an epitaxial liner is formed on only the pFET channel region of the at least one second semiconductor fin such that a first threshold voltage of the nFET channel region is different than a second threshold voltage of the pFET channel. |
申请公布号 |
US2015318307(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201414265735 |
申请日期 |
2014.04.30 |
申请人 |
International Business Machines Corporation |
发明人 |
Kerber Pranita;Ouyang Qiqing C.;Reznicek Alexander |
分类号 |
H01L27/12;H01L21/02;H01L21/308;H01L21/8238 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |