| 发明名称 |
Perovskite Material Layer Processing |
| 摘要 |
A method for processing a perovskite photoactive layer. The method comprises depositing a lead salt precursor onto a substrate to form a lead salt thin film, depositing a second salt precursor onto the lead salt thin film, annealing the substrate to form a perovskite material. |
| 申请公布号 |
US2015318477(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514796468 |
申请日期 |
2015.07.10 |
| 申请人 |
Irwin Michael D.;Chute Jerred A.;Dhas Vivek V. |
发明人 |
Irwin Michael D.;Chute Jerred A.;Dhas Vivek V. |
| 分类号 |
H01L51/00;H01L51/42;C23C14/06;C07F7/24;C23C16/50 |
主分类号 |
H01L51/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a perovskite photoactive layer comprising:
depositing a lead salt precursor onto a substrate to form a lead salt thin film; depositing a second salt precursor onto the lead salt thin film; and annealing the substrate to form a perovskite material. |
| 地址 |
Dallas TX US |
