| 发明名称 |
BULK ACOUSTIC WAVE (BAW) DEVICE HAVING ROUGHENED BOTTOM SIDE |
| 摘要 |
A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 μm root mean square (RMS). |
| 申请公布号 |
US2015318461(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514692481 |
申请日期 |
2015.04.21 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
JACOBSEN STUART M.;GOODLIN BRIAN |
| 分类号 |
H01L41/08;H03B28/00;H01L41/047 |
主分类号 |
H01L41/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a bulk acoustic wave (BAW) resonator, comprising:
providing a Bragg mirror on a top side surface of a substrate having a bottom side surface opposite said top side surface; forming a bottom electrode layer on said Bragg mirror; forming a piezoelectric layer on said bottom electrode layer; forming a top dielectric layer on said piezoelectric layer; forming a top electrode layer on said top dielectric layer, and roughening said bottom side surface to provide a final surface roughness of at least 1 μm root mean square (RMS), wherein said method excludes a polishing step(s) after said roughening. |
| 地址 |
Dallas TX US |
