SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a semiconductor device and a method of manufacturing the same. An example device may include: a fin formed on a substrate; a gate stack formed on the substrate and intersecting the fin, wherein the gate stack is isolated from the substrate by an isolation layer, and a Punch-Through Stopper (PTS) formed under the fin, including a first section directly under a portion of the fin where the fin intersects the gate stack and second sections on opposite sides of the first section, wherein the second sections each have a doping concentration lower than that of the first section.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a fin structure on a substrate; forming an isolation layer on the substrate, wherein the isolation layer exposes a portion of the fin structure, which serves as a fin for the semiconductor device; performing first ion implantation to form a Punch-Through Stopper (PTS) under the fin; forming a gate stack intersecting the fin structure on the isolation layer; and performing second ion implantation to compensate for the PTS.