发明名称 |
METHOD OF FABRICATING A THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure. |
申请公布号 |
US2015318302(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514800322 |
申请日期 |
2015.07.15 |
申请人 |
PARK Sang-Yong;PARK Jintaek |
发明人 |
PARK Sang-Yong;PARK Jintaek |
分类号 |
H01L27/115;H01L21/311;H01L21/28;H01L21/3213 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |