SEMICONDUCTOR MEMORY WITH U-SHAPED CHANNEL

摘要

A semiconductor memory with a U-shaped channel comprises: a U-shaped channel region arranged in a semiconductor substrate, a source region, a drain region, a first layer of insulation film arranged on the U-shaped channel region, a floating gate provided with a notch, a second layer of insulation film, a control gate, a p-n junction diode arranged between the floating gate and the drain region, and a gate controlled diode formed by the control gate, the second layer of insulation film, and the p-n junction diode and using the control gate as a gate. Under the precondition of not increasing the manufacturing cost and difficulty of the semiconductor memory with a U-shaped channel and not affecting the performance of the semiconductor memory with a U-shaped channel, the dimension of a semiconductor storage device is further reduced and the chip density is increased by arranging the notch in the floating gate.

主权项

1. A U-shaped channel semiconductor memory, comprising:
a semiconductor substrate of a first doping type provided with a U-shaped channel region; a source region and a drain region both of a second doping type provided in the semiconductor substrate, the U-shaped channel region being provided between the source region and the drain region; a first layer of insulating film disposed on the U-shaped channel region, the first layer of insulating film extending to a horizontal surface of the drain region; a floating gate opening region provided in the first layer of insulating film, the floating gate opening region being located on a side wall of the drain region on a top of the U-shaped channel region; a floating gate of the first doping type covering the first layer of insulating film and the floating gate opening region; and a p-n junction diode between the floating gate and the drain region; wherein the U-shaped channel semiconductor memory further comprises: a notch of the floating gate provided between a top of the floating gate and the source region, and a second layer of insulating film covering a side wall of the source region on the top of the U-shaped channel region and the floating gate, the second layer of insulating film extending towards both sides of the U-shaped channel region to the source region and the p-n junction diode; and a control gate covering the second layer of insulating film, the control gate, the second layer of insulating film, and the p-n junction diode forming a gated diode which uses the control gate as a gate.