| 主权项 |
1. A plasma processing system, comprising:
a chamber; a bottom electrode disposed in the chamber; a lower extended electrode disposed around the bottom electrode; an upper ceramic plate disposed in the chamber, the upper ceramic plate being disposed above the bottom electrode in an opposing relationship with the bottom electrode, such that, when a wafer is present over the bottom electrode, a separation gap is defined between a top surface of the wafer and the upper ceramic plate, wherein the separation gap is less than about 2.0 mm; an upper extended electrode disposed around the upper ceramic plate; a lower process exclusion zone ring situated between the lower extended electrode and the bottom electrode; an upper process exclusion zone ring situated between the upper extended electrode and the upper ceramic plate, the upper process exclusion zone ring having a radio frequency (RF) electrode ring embedded therein; a first RF generator for generating RF power for the bottom electrode; a second RF generator for generating RF power for the RF electrode ring embedded in the upper process exclusion zone ring; and a controller for transmitting processing instructions, the processing instructions including a power setting for the first RF generator and a power setting for the second RF generator. |
