DEPOSITION METHOD

摘要

This deposition method involves sputtering a target (34) with an inductively-coupled plasma (P) while supplying sputtering power to the target which has been arranged within a deposition chamber (18), and forming a film (52) on a substrate (12) which has been positioned facing the target within the deposition chamber, and is provided with: a substrate positioning step (S10) for positioning a substrate to face the target within the deposition chamber in which the target has been placed; a cleaning step (S14) for generating an inductively-coupled plasma between the target and the substrate while no sputtering power is being supplied to the target, and plasma-treating the surface of the target with the inductively-coupled plasma, to thereby clean the surface of the target; and a deposition step (S16) for sputtering the target with the inductively-coupled plasma by supplying sputtering power to the target, and forming a film on the substrate.