MULTIPLE EPITAXIAL HEAD RAISED SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING SAME

摘要

A non-planar semiconductor structure includes raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon naturally growing into a diamond shape. The surface area of the epitaxial structure may be increased by removing portion(s) thereof. The removal may create a multi-head (e.g., dual-head) epitaxial structure, together with the neck of the raised structure resembling a Y-shape. Raised structures that are not intended to include an epitaxial structure will be masked during epitaxial structure creation and modification. In addition, in order to have a uniform height, the filler material surrounding the raised structures is recessed around those to receive epitaxial structures.

主权项

1. A method, comprising:
providing a starting non-planar semiconductor structure, the structure comprising a semiconductor substrate and at least one raised semiconductor structure coupled to the substrate; growing at least one epitaxial structure on a top surface of one or more of the at least one raised semiconductor structure, wherein the at least one epitaxial structure has a surface area; and increasing the surface area of the at least one epitaxial structure without growing additional epitaxy.