SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate in which a word line region is formed; and a barrier metal layer, formed of a metal nitride, arranged on the word line region and causing a Schottky junction, the barrier metal layer including:
a first nitride material formed of a nitrified first material; anda second nitride material formed of a nitrified second material, wherein the barrier metal layer is formed of a mixture of the first nitride material and the second nitride material, and where any one of the first material or the second material is rich in a metal used to form the metal nitride.